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International Rectifier - (IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

Numéro de référence IRHNA57064
Description (IRHNA5x064) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Fabricant International Rectifier 
Logo International Rectifier 





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IRHNA57064 fiche technique
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PD - 91852G
IRHNA57064
RADIATION HARDENED
JANSR2N7468U2
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
60V, N-CHANNEL
REF: MIL-PRF-19500/673
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57064 100K Rads (Si) 0.005675*A JANSR2N7468U2
IRHNA53064 300K Rads (Si) 0.005675*A JANSF2N7468U2
IRHNA54064 600K Rads (Si) 0.005675*A JANSG2N7468U2
IRHNA58064 1000K Rads (Si) 0.006575*A JANSH2N7468U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
4.4
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/09/04
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