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NXP Semiconductors - 40 V PNP BISS loadswitch

Numéro de référence PBLS4004D
Description 40 V PNP BISS loadswitch
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBLS4004D fiche technique
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PBLS4004D
40 V PNP BISS loadswitch
Rev. 02 — 19 July 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = 500 mA;
resistance
IB = 50 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
Min
-
[1] -
[2] -
-
-
15.4
0.8
Typ
-
-
240
-
-
22
1
Max
40
1
340
50
100
28.6
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
m
V
mA
k
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