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PDF IRHMS68260 Data sheet ( Hoja de datos )
| Número de pieza | IRHMS68260 | |
| Descripción | (IRHMS6x260) RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 94667A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS67260
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHMS67260 100K Rads (Si) 0.029Ω 45A*
IRHMS63260 300K Rads (Si) 0.029Ω 45A*
IRHMS64260 600K Rads (Si) 0.029Ω 45A*
IRHMS68260 1000K Rads (Si) 0.029Ω 45A*
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching appli-
cations such as DC-DC converters and motor con-
trollers. These devices retain all of the well
established advantages of MOSFETs such as volt-
age control, ease of paralleling and temperature sta-
bility of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45*
35 A
180
208 W
1.67
W/°C
±20 V
344 mJ
45 A
20.8
mJ
5.4 V/ns
-55 to 150
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/07/03
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1 page  
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Pre-Irradiation
IRHMS67260
14000
12000
10000
8000
6000
VGS = 0V, f = 110M0KHHzz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
4000
2000
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 45A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250 300
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHMS68260.PDF ] | |
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