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Numéro de référence | K596 | ||
Description | Si N-CHANNEL JUNCTION FET | ||
Fabricant | Jiangsu Changjiang Electronics | ||
Logo | |||
1 Page
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
K596 Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
PCM: 0.1W Tamb=25
Gate Current
I G: 10mA
Drain current
I D: 1mA
Drain-Source voltage
BVGDO: -20
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1.SOURCE
2.GATE
3.DRAIN
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP
Gate-Drain breakdown Voltage
BVGDO DataSIGh=e-1e0t40U.cAom
-20
Gate-Source cut-off Voltage
VGS(off)
VDS= 5V , ID=1 A
-0.6
Drain Current
Forward Transfer Admittance
IDSS
|YFS|
VDS= 5 V , VGS=0
VDS= 5V , VGS=0, f=1KHz
100
0.4 1.2
Input Capacitance
Ciss VDS=5V, VGS=0, f=1MHz
3.5
Output Capacitance
CRSS
VDS= 5 V, VGS=0
f = 1MHz
0.65
MAX
-1.5
800
UNIT
V DataShee
V
A
pF
pF
IDSS Classification
Classification
IDSS (µA)
A
100-170
B
150-240
C
210-350
D
320-480
E
440-800
DataSheet4U.com
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Pages | Pages 3 | ||
Télécharger | [ K596 ] |
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