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PDF UPA1873 Data sheet ( Hoja de datos )
| Número de pieza | UPA1873 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1873 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 28.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
RDS(on)4 = 29.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit : mm)
85
1 : Drain1
2, 3 : Source1 1.2 MAX.
4 : Gate1
1.0±0.05
5 : Gate2
6, 7 : Source2
8 : Drain2
3°
+5°
–3°
0.1±0.05
14
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
ORDERING INFORMATION
DataSheet4U.com
0.25
0.5
0.6
+0.15
–0.1
1.0 ±0.2
PART NUMBER
µPA1873GR-9JG
PACKAGE
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
DataShee
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (2 unit) Note2
ID(DC)
ID(pulse)
PT
±6.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15629EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001
1 page  
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µ PA1873
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10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
1000
td (off)
tf
100
tr
td (on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
VDD = 10 V
VGS = 4.0 V
10 RG = 10 Ω
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed
VGS = 0 V
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
ID = 6.0 A
VDD = 16 V
4
10 V
3
1
2
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0.1
1
0.01
0.4
0.6 0.8
1.0
VF(S-D) - Source to Drain Voltage - V
1.2
0
048
QG - Gate Charge - nC
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse
PD (FET1) : PD (FET2) = 1:1
Mounted on FR-4 board of 25 cm2 x 1.6 mm
125˚C/W
Mounted on ceramic board of 50 cm2 x 1.1 mm
62.5˚C/W
10
12
DataShee
DataSheet4U.com
1
0.1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
Data Sheet G15629EJ1V0DS
100 1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1873.PDF ] | |
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