PDF HY5DU561622LT Data sheet ( Hoja de datos )

Número de pieza	HY5DU561622LT
Descripción	(HY5DU56xx22A(L)T) 256M-S DDR SDRAM
Fabricantes	Hynix Semiconductor
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No Preview Available ! www.DataSheet4U.com HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T 256M-S DDR SDRAM HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T DataSheet4U.com DataShee This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4/ May. 02 DataSheet4U.com 1 page www.DataSheet4U.com PIN DESCRIPTION PIN TYPE CK, /CK Input CKE Input /CS BA0, BA1 Input Input et4U.com A0 ~ A12 Input /RAS, /CAS, /WE Input DM (LDM, UDM) Input DQS (LDQS, UDQS) DQ VDD/VSS VDDQ/VSSQ VREF NC I/O I/O Supply Supply Supply NC HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T DESCRIPTION Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after Vdd is applied. Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com- mands are masked when CS is registered high. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE- CHARGE command is being applied. Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HadIGdrHe)s.sIifnopnultyDs oaanltseaobSparhnoekvieidste4totUhbe.ecoopprmeccohdaergdeudri,ntghea bank is selected by BA0, BA1. The MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being entered. Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corre- sponds to the data on DQ8-Q15. Data Strobe: Output with read data, input with write data. Edge aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15. Data input / output pin : Data bus Power supply for internal circuits and input buffers. Power supply for output buffers for noise immunity. Reference voltage for inputs for SSTL interface. No connection. DataShee Rev. 0.4/ May. 02 DataSheet4U.com 5 5 Page www.DataSheet4U.com HY5DU56422A(L)T HY5DU56822A(L)T HY5DU561622A(L)T et4U.com OPERATION COMMAND TRUTH TABLE-I Current State /CS /RAS /CAS /WE Address Command HXXX X DSEL L HHH X NOP L HHL X BST IDLE L H L H BA, CA, AP READ/READAP L H L L BA, CA, AP WRITE/WRITEAP L L H H BA, RA L LHL BA, AP ACT PRE/PALL L L LH X AREF/SREF L L L L OPCODE HXXX X L HHH X L HHL X MRS DSEL NOP BST ROW ACTIVE L H L H BA, CA, AP READ/READAP L H L L BA, CA, AP WRITE/WRITEAP L L H H BA, RA ACT DataSheet4U.com L LHL BA, AP PRE/PALL L L LH X AREF/SREF L L L L OPCODE MRS HXXX X DSEL L HHH X NOP L HHL X BST L H L H BA, CA, AP READ/READAP READ L H L L BA, CA, AP WRITE/WRITEAP L L H H BA, RA ACT L LHL BA, AP PRE/PALL L L LH X AREF/SREF WRITE L L L L OPCODE MRS HXXX L HHH X X DSEL NOP L HHL X BST L H L H BA, CA, AP READ/READAP L H L L BA, CA, AP WRITE/WRITEAP Action NOP or power down3 NOP or power down3 ILLEGAL4 ILLEGAL4 ILLEGAL4 Row Activation NOP Auto Refresh or Self Refresh5 Mode Register Set NOP NOP ILLEGAL4 Begin read : optional AP6 Begin write : optional AP6 ILLEGAL4 Precharge7 ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end Terminate burst Term burst, new read:optional AP8 ILLEGAL ILLEGAL4 Term burst, precharge ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end ILLEGAL4 Term burst, new read:optional AP8 Term burst, new write:optional AP DataShee Rev. 0.4/ May. 02 11 DataSheet4U.com 11 Page

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