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PDF TDW3C115N12 Data sheet ( Hoja de datos )
| Número de pieza | TDW3C115N12 | |
| Descripción | (TDW3C115N12 - TDW3C115N18) Thyristor Module | |
| Fabricantes | Eupec | |
| Logotipo |  |
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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18
(ISOPACK)
N
W3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Datenblatt gilt auch für TD W3H
Datasheet also applicable for TD W3H
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C...Tvj max
repetitive peak forward off-state and reverse voltages
VDRM, VRRM
1200, 1400 V
1600, 1800 V
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = - 40°C...Tvj max
VDSM
1200, 1400 V
1600, 1800 V
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = + 25°C...Tvj max
VRSM
1300, 1500 V
1700, 1900 V
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS on-state current (per chip)
ITRMSM
100 A
Effektivstrom (pro Phase)
RMS current (per arm)
TC = 85°C
TC = 73°C
TA = 45°C, KM 11
TA = 45°C, KM 33
TA = 35°C, KM 14 (VL = 45l/s)
TA = 35°C, KM 33 (VL = 90l/s)
IRMS
115 A
141 A
38 A
55 A
97 A
115 A
Stoßstrom-Grenzwert
surge current
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
ITSM
1000 A
870 A
Grenzlastintegral
I²t-value
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
I²t
5000 A²s
3780 A²s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
f = 50Hz, iGM = 0,6A, diG/dt = 0,6A/µs
(di/dt)cr
120 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
Data8S. Kheennebtu4chUsta.cbeo/m8th letter F
(dv/dt)cr
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Tvj = Tvj max, iT = 150A
vT
Tvj = Tvj max
V(T0)
Tvj =Tvj max
rT
Tvj = 25°C, vD = 6V
IGT
Tvj = 25°C, vD = 6V
VGT
Tvj = Tvj max, vD = 6V
Tvj = Tvj max, vD = 0,5 VDRM
Tvj = Tvj max, vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 6V, RA = 5Ω
IH
Tvj = 25°C, vD = 6V, RGK ≥ 20Ω
iGM = 0,6A, diG/dt = 0,6A/µs, tg = 10µs
IL
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
DIN IEC 747-6
Tvj = 25°C, iGM = 0,6A, diG/dt = 0,6A/µs
tgd
max. 1,81 V
0,95 V
4,3 mΩ
max. 150 mA
max. 2,5 V
max.
max.
max.
5,0 mA
2,5 mA
0,2 V
max. 200 mA
max. 600 mA
max. 10 mA
max. 1,2 µs
DataShee
DataSheet4U.comMOD-E1; R. Jörke
09. Feb 99
A /99
Seite/page 1(9)
1 page  
www.DataSheet4U.com
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18
(ISOPACK)
N
W3
0,60
0,50
et4U.com
0,40
0,30
DataSheet4U.com
180° sin
DC
DataShee
0,20
0,10
0,00
0,001
0,01
0,1
t [s]
1
10
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per armthJZC = f(t)
Parameter: Stromflußwinkel / Current conduction angleΘ
DataSheet4U.com
MOD-E1; R. Jörke
09. Feb 99
Seite/page 5(9)
DataSheet4 U .com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TDW3C115N12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TDW3C115N12 | (TDW3C115N12 - TDW3C115N18) Thyristor Module | Eupec |
| TDW3C115N14 | (TDW3C115N12 - TDW3C115N18) Thyristor Module | Eupec |
| TDW3C115N16 | (TDW3C115N12 - TDW3C115N18) Thyristor Module | Eupec |
| TDW3C115N18 | (TDW3C115N12 - TDW3C115N18) Thyristor Module | Eupec |
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