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NLB-300 fiches techniques PDF

RF Micro Devices - CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz

Numéro de référence NLB-300
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
Fabricant RF Micro Devices 
Logo RF Micro Devices 





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NLB-300 fiche technique
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Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
NLB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 10GHz
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NLB-300 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NLB-300 provides flexibility and stability. The
NLB-300 is packaged in a low-cost, surface-mount plastic
package, providing ease of assembly for high-volume
tape-and-reel requirements.
D
6
0.08 S
Seating Plane
DataSheet4U.comS
B
A
C
N5
E
F
1J
L3
MILLIMETERS
INCHES
Min. Nom. Max. Min. Nom. Max.
A 0.535 REF.
0.021 REF.
4 M B 2.39 2.54 2.69 0.094 0.100 0.106
C 0.436 0.510 0.586 0.017 0.020 0.023
D 2.19 2.34 2.49 0.086 0.092 0.098
E 1.91 2.16 2.41 0.075 0.085 0.095
F 1.32 1.52 1.72 0.052 0.060 0.068
G 0.10 0.15 0.20 0.004 0.006 0.008
H 0.535 0.660 0.785 0.021 0.026 0.031
1 J 0.05 0.10 0.15 0.002 0.004 0.006
2 K 0.65 0.75 0.85 0.025 0.029 0.033
3 L 0.85 0.95 1.05 0.033 0.037 0.041
4 M 4.53 4.68 4.83 0.178 0.184 0.190
5 N 4.73 4.88 5.03 0.186 0.192 0.198
NOTE: All dimensions are in millimeters, and
the dimensions in inches are for reference only.
H
Gauge Plane
G 0.1
2 Kx3
DataShee
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
9InGaP/HBT
SiGe HBT
GaN HEMT
Si CMOS
SiGe Bi-CMOS
RF IN 1
GND
4
MARKING - N3
3 RF OUT
2
GND
DataSheet4U.com
Functional Block Diagram
Rev A7 040409
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Package Style: Micro-X, 4-Pin, Plastic
Features
• Reliable, Low-Cost HBT Design
• 13.0dB Gain, +11.1dBm P1dB@2GHz
• High P1dB of [email protected] and
+12.7 dBm @ 10.0 GHz
• Single Power Supply Operation
• 50I/O Matched for High Freq. Use
Ordering Information
NLB-300
Cascadable Broadband GaAs MMIC Amplifier DC to
10 GHz
NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NLB-300-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-131

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