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ON Semiconductor - Regulated Charge Pump

Numéro de référence NIS6201
Description Regulated Charge Pump
Fabricant ON Semiconductor 
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NIS6201 fiche technique
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NIS6201
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Floating, Regulated Charge
Pump
The NIS6201 charge pump is designed to provide economical, low
level power to circuits above ground level potential, such as the drive
for ORing diodes. It is a very cost−effective replacement for a small,
isolated, switching power supply.
It contains an internal linear regulator, and a versatile charge pump
to allow bias voltage supplies to be transferred from a ground
referenced source to a higher potential. The design of the charge
pump allows for any isolation voltage required, as the high voltage
components are external to the pump and can be sized accordingly.
Features
Integrated Linear Regulator and Charge Pump
Thermal Limit Protection
Adjustable Voltage Output
High Voltage Isolation
Applications
ORing Diodes
Floating Supervisory Circuits
LED Driver
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VCC
http://onsemi.com
8
1
SOIC−8 NB
CASE 751
MARKING
DIAGRAM
8
TBD
ALYW
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN CONNECTIONS
PWRGND 1
PWRGND 2
SIGGND 3
COMP 4
8 PWRGND
7 DRIVE
6 VREG
5 VCC
(Top View)
0.50 V
+
Regulator
30 V
+
50 mV
Overcharge
1.0 MHz
Oscillator
ORDERING INFORMATION
Device
Package
Shipping
TBD
SOIC−8
TBD
Drive
DataShee
Comp
Vreg Gnd
Figure 1. Charge Pump Block Diagram
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
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© Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. P2
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1
Publication Order Number:
NIS6201/D

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