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PDF DS1258W Data sheet ( Hoja de datos )
| Número de pieza | DS1258W | |
| Descripción | 3.3V 128k x 16 Nonvolatile | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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DS1258W
3.3V 128k x 16 Nonvolatile
SRAM
FEATURES
PIN ASSIGNMENT
§ 10-Year Minimum Data Retention in the
Absence of External Power
CEU
CEL
1
2
§ Data is Automatically Protected During a
Power Loss
§ Separate Upper Byte and Lower Byte Chip
DQ15
DQ14
DQ13
DQ12
3
4
5
6
Select Inputs
§ Unlimited Write Cycles
§ Low-Power CMOS
§ Read and Write Access Times as Fast as
100ns
§ Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
§ Optional Industrial Temperature Range of
-40°C to +85°C, Designated IND
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
7
8
9
10
11
12
13
14
15
16
17
18
DQ0 19
DataSheet4U.com OE 20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 - A16
- Address Inputs
DQ0 - DQ15
- Data In/Data Out
CEU - Chip Enable Upper Byte
CEL - Chip Enable Lower Byte
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+3.3V)
- Ground
DataShee
DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV)
SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy
source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such
a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place
of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
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DS1258W
DC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC = 3.3V ± 0.3V)
PARAMETER
SYMBOL
DS1258W-100
MIN MAX
DS1258W-150
MIN MAX
UNITS
NOTES
Read Cycle Time
Access Time
tRC 100
150
ns
tACC 100 150 ns
OE to Output Valid
tOE 50 70 ns
CE to Output Valid
tCO 100 150 ns
OE or CE to Output Valid
tCOE
5
5
ns 5
Output High-Z from Deselection
tOD
35
35 ns
5
Output Hold from Address
tOH 5
5
ns
Change
Write Cycle Time
Write Pulse Width
tWC 100
tWP 75
150
100
ns
ns 3
Address Setup Time
Write Recovery Time
tAW
tWR1
tWR2
0
5
20
0
5
20
ns
ns 12
ns 13
Output High Z from WE
tODW
35
35 ns
5
et4U.com Output Active from WE
Data Setup Time
Data Hold Time
tOEW
5
tDS 40
tDH1 DataShee0t4U.com
tDH2 20
5
60
0
20
ns 5
ns 4
ns 12
ns 13
DataShee
READ CYCLE
SEE NOTE 1
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DS1258W.PDF ] | |
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