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Numéro de référence | FQPF7N80C | ||
Description | 800V N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FQP7N80C / FQPF7N80C
N-Channel QFET® MOSFET
800 V, 6.6 A, 1.9 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,
ID = 3.3 A
• Low Gate Charge (Typ. 27 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP7N80C FQPF7N80C
800
6.6 6.6 *
4.2 4.2 *
26.4 26.4 *
± 30
580
6.6
16.7
4.5
167 56
1.33 0.44
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP7N80C
0.75
0.5
62.5
FQPF7N80C
2.25
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP7N80C / FQPF7N80C Rev. C1
1
www.fairchildsemi.com
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Pages | Pages 10 | ||
Télécharger | [ FQPF7N80C ] |
No | Description détaillée | Fabricant |
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