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DIM100PHM33-F000 fiches techniques PDF

Dynex Semiconductor - IGBT Power Module

Numéro de référence DIM100PHM33-F000
Description IGBT Power Module
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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DIM100PHM33-F000 fiche technique
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DIM100PHM33-F000
FEATURES
I Soft Punch Through Silicon
I 10µs Short Circuit Withstand
I Isolated MMC Base with AlN Substrates
I High Thermal Cycling Capability
DIM100PHM33-F000
Half Bridge IGBT Module
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
2.8V
IC
(max)
100A
IC(PK)
(max)
200A
* Measured at auxiliary terminals.
PDS5764-1.1 April 2004
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
1(E1/C2)
2(C1)
3(E2)
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-F000 is a half bridge 3300V sDoafttapSunhcehet4U.com
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
5(E1)
4(G1)
8(C1)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
DataShee
ORDERING INFORMATION
Order As:
DIM100PHM33-F000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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