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PDF HFP740 Data sheet ( Hoja de datos )
| Número de pieza | HFP740 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Shantou Huashan Electronic | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP740
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
This Power MOSFET is produced using advanced planar stripe, DMOS
technology. This latest technology has been especially designed to minimize
on-state resistance, have a high rugged avalanche characteristics. This
devices is specially well suited for half bridge and full bridge resonant
topolgy like a electronic lamp ballast.
TO-220
1- G 2-D 3-S
█ Features
• 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF740
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ---------D-a--ta--S-h--e-e-t-4-U--.-c-o-m---------------------------- -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------400V
VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 400V
VGSS —— Gate-Source Voltage -------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous) --------------------------------------------------------------------- 10A
PD —— Maximum Power Dissipation --------------------------------------------------------------- 125W
IAR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A
EAS—— Single Pulse Avalanche Energy
(starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 450 mJ
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ 0.5
Unit
℃/W
℃/W
℃/W
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█ Typical Characteristics
HFP740
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFP740.PDF ] | |
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