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VG2618160CJ fiches techniques PDF

Vanguard Microelectronics Limited - CMOS DRAM

Numéro de référence VG2618160CJ
Description CMOS DRAM
Fabricant Vanguard Microelectronics Limited 
Logo Vanguard Microelectronics Limited 





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VG2618160CJ fiche technique
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Description
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabri-
cated with an advanced submicron CMOS technology and designed to operate from a single 5V
only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42 - pin plas-
tic SOJ.
Features
• Single 5V (±10 %) or 3.3V (+10%,-5%) only power supply
• High speed tRAC access time : 50/60 ns
• Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
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LVTTL compatible (Vcc = 3.3V)
• 1024 refresh cycles in 16 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
DataShee
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DataShDeoectu4mUen.ct o: m1G5-0163
Rev.1
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