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Numéro de référence | VG26S17405 | ||
Description | CMOS DRAM | ||
Fabricant | Vanguard Microelectronics Limited | ||
Logo | |||
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VIS
Description
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features
• Single 5V(±10 %) or 3.3V(±10 %) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
DataSheet4U.com
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
DataShee
DataSheet4U.com
Document:1G5-0124
DataSheet4 U.com
Rev.1
Page 1
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Pages | Pages 27 | ||
Télécharger | [ VG26S17405 ] |
No | Description détaillée | Fabricant |
VG26S17400D | CMOS DRAM | Vanguard International Semiconductor |
VG26S17400EJ-5 | 4/194/304 x 4 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
VG26S17400EJ-6 | 4/194/304 x 4 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
VG26S17400FJ | CMOS DRAM | Vanguard International Semiconductor |
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