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PDF LTR-4206E Data sheet ( Hoja de datos )

Número de pieza LTR-4206E
Descripción NPN T-1 Standard Phototransistor
Fabricantes Lite-On Technology 
Logotipo Lite-On Technology Logotipo



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NPN T-1 Standard
Phototransistor
LTR-4206/LTR-4206E
Features
Wide range of collector currents.
Lens for high sensitivity.
Low cost plastic package.
Description
The LTR-4206 series consist of a NPN silicon
phototransistor mounted in a lensed, clear plastic, end
looking package. The lensing effect of the package
allows an acceptance half angle of 10 measured from
the optical axis to the half power point. This series is
mechanically and spectrally matched to the LTE-4206
series of infrared emitting diodes. The LTR-4206E is a
special dark plastic package that cut the visible light
and suitable for the detectors of infrared application.
Package Dimensions
DataShee
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
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the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
Maximum Rating
100
30
5
-40 to +85
-55 to +100
260 for 5 Seconds
Unit
mW
V
V
Electrical Optical Characteristics at Ta=25
Parameter
Symbol Part No.
Collector-Emitter Breakdown Voltage
V(BR)CEO
Emitter-Collector Breakdown Voltage
V(BR)ECO
Collector Emitter Saturation Voltage
Rise Time
Fall Time
DataSheet4CUol.leccotomr Dark Current
On State Collector Current
VCE(SAT)
Tr
Tf
ICEO
IC(ON)
LTR-4206
LTR-4206E
Min.
30
5
1
1
Typ.
10
15
4
2
Max. Unit
V
V
0.4 V
S
S
100 nA
mA
DataSheet4 U .com
Test
Condition
IC=1mA
Ee=0mW/cm2
IE=100 A
Ee=0mW/cm2
IC=100 A
Ee=1mW/cm2
VCC=5V
IC=1mA
RL=1K
VCE=10V
Ee=0mW/cm2
VCE=5V
Ee=1mW/cm2
=940nm
10-31

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