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ROHM Semiconductor - General purpose transistor (dual transistors)

Numéro de référence EMZ1
Description General purpose transistor (dual transistors)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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EMZ1 fiche technique
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Transistors
EMZ1 / UMZ1N / IMZ1A
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
zFeatures
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zExternal dimensions (Unit : mm)
EMZ1
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : Z1
zStructure
NPN / PNP epitaxial planar silicon transistor
UMZ1N
zEquivalent circuit
EMZ1 / UMZ1N
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
1.25
2.1
IMZ1A
(4)
Tr2
0.1Min.
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Each lead has same dimensions
(5) (6)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
Tr1
IMZ1A
(3) (2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
Collector current
VEBO
IC
Power
EMZ1, UMZ1N
dissipation IMZ1A
PC
Junction temperature
Tj
Storage temperature
Tstg
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Limits
Tr1 Tr2
60 60
50 50
7 6
150 150
150 (TOTAL)
300 (TOTAL)
150
55 to +150
Unit
V
V
V
mA
1
mW
2
˚C
˚C
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol : Z1
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