|
|
PDF NILMS4501N Data sheet ( Hoja de datos )
| Número de pieza | NILMS4501N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
1. NILMS4501N  Hay una vista previa y un enlace de descarga de NILMS4501N (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected,
1:250 Current Mirror, SO−8 Leadless
N−Channel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
transfer.
Features
• Current Sense MOSFET
• "15% Current Mirror Accuracy
• ESD Protected on the Main and the Mirror MOSFET
• Low Gate Charge
Applications
• DC−DC Converters
• Voltage Regulator Modules
• Small DC Motor Controls
DataSheet4U.com
http://onsemi.com
VDSS
24 V
RDS(on) Typ
12 mW @ 4.5 V
ID MAX
9.5 A
N−Channel with Current
Mirror FET
Drain
Gate
Main
Sense
Source
MARKING
DIAGRAM
DataShee
SO−8 LL
CASE 508AA
xxxxx
AYWW
xxxxx
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
PIN CONNECTIONS
Sense (1)
Drain (4)
Source (2)
Gate (3)
(Bottom View)
DataSheet4U.com
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 2
DataSheet4 U .com
ORDERING INFORMATION
Device
Package
Shipping†
NILMS4501NR2 SO−8 LL 2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NILMS4501N/D
1 page  
www.DataSheet4U.com
NILMS4501N
TYPICAL ELECTRICAL CHARACTERISTICS
et4U.com
2.5
VGS = 10 V
ID = 3 A
2.0
1.5
1.0
0.5
−050 0 50 100 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On−Resistance Variation with
Temperature
1E6
VGS = 0 V
1E5
1000
TJ = 175°C
100 TJ = 125°C
10
1.0
0.1 TJ = 25°C
0.01
200 0
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Drain−To−Source Leakage
Current versus Voltage
25
2000
1800
1600
1400
1200
1000
800
600
ID = 1 A
VGS = 4.5 V
TJ = −55°C
TJ = 25°C
500
450 TJ = −55°C
TJ = 125°C
400
350
TJ =D17a5t°aCSheet4U.com
300 TJ = 175°C
TJ = 25°C
TJ = 125°C
ID = 1 A
VSENSE = 0 V
VSOURCE = 0 V
400 250
200
0
0 2 4 6 8 10 12 14 16
RSENSE, EXTERNAL RESISTOR VALUE ON SENSE PIN (W)
200
2.0
2.5 3.0 3.5 4.0 4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
5.0
Figure 9. Current Ratio versus RSENSE
Figure 10. Current Ratio versus VGS
DataShee
2500
2000 TJ = −55°C
1500
ID = 1 A
VSENSE = 0 V
VGS = 4.5 V
2000
1800
1600
ID = 1 A
VSOURCE = 0 V
VGS = 4.5 V
1400
1200
−55°C
25°C
125°C
175°C
1000
500
25°C
125°C
1000
800
600
400
0 TJ = 175°C
−0.01 −0.005 0 0.005 0.01 0.015 0.02 0.025 0.03
VSOURCE, VOLTAGE DROP FROM SOURCE PIN TO GROUND (V)
Figure 11. IRATIO versus VSOURCE
200
0
−0.01 −0.005
0
0.005 0.01 0.015 0.02
VSENSE, VOLTAGE DROP FROM SENSE PIN TO GROUND (V)
Figure 12. Current Ratio versus VSENSE
DataSheet4U.com
DataSheet4 U .com
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NILMS4501N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NILMS4501N | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |