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M53230810CW0 fiches techniques PDF

Samsung Semiconductor - (M532308x0CB0/CW0) DRAM Module

Numéro de référence M53230810CW0
Description (M532308x0CB0/CW0) DRAM Module
Fabricant Samsung Semiconductor 
Logo Samsung Semiconductor 





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M53230810CW0 fiche technique
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DRAM MODULE
M53230800CW0/CB0
M53230810CW0/CB0
M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM
high density memory module. The Samsung M5323080(1)0C
consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ
package mounted on a 72-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit
board for each DRAM. The M5323080(1)0C is a Single In-line
Memory Module with edge connections and is intended for
mounting into 72 pin edge connector sockets.
PERFORMANCE RANGE
Speed
-50
tRAC
50ns
tCAC
13ns
-60
60ns
15ns
tRC
90ns
110ns
tHPC
25ns
30ns
FEATURES
• Part Identification
- M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder)
- M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold)
- M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder)
- M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold)
• Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• 1st Gen. JEDEC standard PDPin & pinout
• PCB : Height(1000mil), double sided component
PIN CONFIGURATIONS
Pin Symbol Pin Symbol
1 VSS 37 NC
2
DQ0
38
NC
3
DQ16
39
Vss
4 DQ1 40 CAS0
5
DQ17
41
CAS2
6 DQ2 42 CAS3
7
DQ18
43
CAS1
8 DQ3 44 RAS0
9
DQ19
45
RAS1
10 Vcc 46
NC
11 NC 47
W
12 A0 48 NC
13 A1 49 DQ8
14 A2 50 DQ24
15 A3 51 DQ9
16 A4 52 DQ25
17 A5 53 DQ10
18 A6 54 DQ26
19 A10 55 DQ11
20 DQ4 56 DQ27
21 DQ20 57 DQ12
22 DQ5 58 DQ28
23 DQ21 59
Vcc
24 DQ6 60 DQ29
25 DQ22 61 DQ13
26 DQ7 62 DQ30
27 DQ23 63 DQ14
28 A7 64 DQ31
29 A11 65 DQ15
30 Vcc 66
NC
31 A8 67 PD1
32 A9 68 PD2
33 RAS1 69
PD3
34 RAS0 70
PD4
35 NC 71 NC
36 NC 72 Vss
PIN NAMES
Pin Name
A0 - A11
A0 - A10
DataSheet4U.com
DQ0 - DQ31
W
RAS0, RAS1
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs(4K Ref)
Address Inputs(2K Ref)
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
DataShee
PRESENCE DETECT PINS (Optional)
Pin
50NS
60NS
PD1 NC
NC
PD2 Vss Vss
PD3 Vss
NC
PD4 Vss
NC
* Pin connection changing available
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
* NOTE : A11 is used for only M53230800CW0/CB0 (4K ref.)
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