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Vishay Siliconix - (ZTE31.5 - ZTE5.1) Voltage Stabilizers

Numéro de référence ZTE3
Description (ZTE31.5 - ZTE5.1) Voltage Stabilizers
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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ZTE3 fiche technique
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Voltage Stabilizers
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
DO-204AH (DO-35 Glass)
max. .079 (2.0)
Cathode
Mark
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
Dimensions are in inches
and (millimeters)
Mechanical Data
Case: DO-35 Glass Case
max. .020 (0.52)
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
DataSheet4U.com
DataShee
Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Operating Current (see Table “Characteristics”)
Inverse Current
Power dissipation at Tamb = 25°C
Junction temperature
Storage temperature range
Symbol
IF
Ptot
TJ
TS
Value
100
300(1)
150
– 55 to +150
Unit
mA
mW
°C
°C
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Forward Voltage at IF = 10 mA
Temperature Coefficient of the
stabilized voltage at IZ = 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
Thermal resistance junction to ambient air
VF
αVZ
αVZ
RθJA
–26
–34
Max.
1.1
400(1)
Unit
V
10–4/°C
10–4/°C
°C/W
DataSheet4U.com
Document Number 88425
02-May-02
DataSheet4 U .com
www.vishay.com
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