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Numéro de référence | TC59SM816CFTI | ||
Description | SDRAM | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
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TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4
banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer
data up to 133M words per second. These devices are controlled by commands setting. Each bank are kept active so
that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh
are easy to use. By having a programmable Mode Register, the system can choose the most suitable modes which
will maximize its performance. These devices are ideal for main memory in applications such as work-stations.
FEATURES
PARAMETER
TC59SM816
-75 -80
tCK Clock Cycle Time (min)
7.5 ns
8 ns
tRAS Active to Precharge Command Period (min)
45 ns
48 ns
tAC Access Time from CLK (max)
5.4 ns
6 ns
tRC Ref/Active to Ref/Active Command Period (min)
65 ns
68 ns
ICC1 Operation Current (max) (Single bank)
75 mA
70 mA
ICC4 Burst Operation Current (max)
95 mA
90 mA
ICC6 Self-Refresh Current (max)
3 mA
3 mA
• Single power supply of 3.3 V ± 0.3 V
• Up to 133 MHz clock frequency
• Synchronous operations: All signals referenced to the positive edges of clock
• Architecture:
Pipeline
• Organization
TC59SM816CFTI:
4,194,304 words × 4DbaatnakSsh×ee16t4bUit.scom
• Programmable Mode register
• Auto Refresh and Self Refresh
• Burst Length:
1, 2, 4, 8, Full page
• CAS Latency:
2, 3
• Single Write Mode
• Burst Stop Function
• Byte Data Controlled by LDQM, UDQM (TC59SM816)
• 8K Refresh cycles/64 ms
• Interface:
LVTTL
• Package
TC59SM816CFTI:
TSOPII54-P-400-0.80B
DataShee
000707EBA2
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
DataSheet4U.com
2001-06-18 1/48
DataSheet4 U .com
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Pages | Pages 48 | ||
Télécharger | [ TC59SM816CFTI ] |
No | Description détaillée | Fabricant |
TC59SM816CFT | (TC59SM804CFT - TC59SM816CFT) SDRAM | Toshiba |
TC59SM816CFTI | SDRAM | Toshiba |
TC59SM816CFTL | (TC59SM804CFT - TC59SM816CFT) SDRAM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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