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IRGPS40B120UD fiches techniques PDF

International Rectifier - Insulated Gate Bipolar Transistor

Numéro de référence IRGPS40B120UD
Description Insulated Gate Bipolar Transistor
Fabricant International Rectifier 
Logo International Rectifier 





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IRGPS40B120UD fiche technique
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PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
DataSheet4U.com
Super-247™
Max.
VCES
Collector-to-Emitter Voltage
1200
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
80
40
160
160
80
40
160
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
www.irf.com
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.83
–––
40
–––
–––
–––
DataSheet4U.com
Units
V
A
V
W
°C
Units
°C/W
N(kgf)
g (oz)
nH
1
8/18/04
DataShee
DataSheet4 U .com

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