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Número de pieza | K1170 | |
Descripción | MOSFET ( Transistor ) - 2SK1170 | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K1170 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1169, 2SK1170www.DataSheet4U.com
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
1 page www.DataSheet4U.com
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
8 Pulse Test
6
20 A
4
10 A
2
ID = 5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
VGS = 10 V
Pulse Test
0.6
ID = 20 A
0.4
10 A
0.2 5 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1169, 2SK1170
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
0.5
VGS = 10 V
0.2 15 V
0.1
0.05
1
2 5 10 20 50 100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
20 Pulse Test
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K1170.PDF ] |
Número de pieza | Descripción | Fabricantes |
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K1170 | MOSFET ( Transistor ) - 2SK1170 | Hitachi Semiconductor |
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