|
|
Numéro de référence | IDC06S60C | ||
Description | 2nd generation thinQ! SiC Schottky Diode | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
www.DataSheet4U.com
2nd generation thinQ!TM SiC Schottky Diode
IDC06S60C
FEATURES:
Applications:
• Revolutionary semiconductor material -
• SMPS, PFC, snubber
Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
• High surge current capability
A
C
Chip Type
IDC06S60C
VBR IF
Die Size
600V 6A 1.45 x 1.354 mm2
Package
sawn on foil
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
DataSheet4U.com 1.45x 1.354
1.213 x 1.117
1.96 / 1.46
mm
mm2
355 µm
75 mm
0 deg
1861 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
DataShee
DataSheet4U.com
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006
DataSheet4 U .com
|
|||
Pages | Pages 4 | ||
Télécharger | [ IDC06S60C ] |
No | Description détaillée | Fabricant |
IDC06S60C | 2nd generation thinQ! SiC Schottky Diode | Infineon Technologies |
IDC06S60CE | Schottky Diode | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |