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ST Microelectronics - 2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM

Numéro de référence M74DW66500B
Description 2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M74DW66500B fiche technique
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M74DW66500B
2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
MULTIPLE MEMORY PRODUCT
Figure 1. Package
– Two 64Mbit (8M x8 or 4M x16), Multiple Bank,
Page, Boot Block, Flash Memories
– 32Mbit (2M x 16) Pseudo Static RAM
SUPPLY VOLTAGE
– VCCF = VCCP = 2.7 to 3.3V
– VPPF = 12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
FBGA
LOW POWER CONSUMPTION
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
LFBGA73 (ZA)
8 x 11.6mm
– Device Code: 227Eh + 2202h + 2201h
EACH FLASH MEMORY
ASYNCHRONOUS PAGE READ MODE
– Page Width: 4 Words
– Page Access: 25, 30ns
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– Random Access: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words/ 8 Bytes at-a-time Program
MEMORY BLOCKS
VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
– Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
– Parameter Blocks (at both Top and Bottom)
DUAL OPERATIONS
– While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
PROGRAM/ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
ACCESS TIME: 70ns
BYTE CONTROL: UB/LB
PROGRAMMABLE PARTIAL ARRAY
8 WORD PAGE ACCESS CAPABILITY: 18ns
(max)
– Faster Production/Batch Programming
LOW STANDBY CURRENT: 100µA
DataShee
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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