HGTG27N60C3DR Datasheet PDF - Intersil
| Part Number | HGTG27N60C3DR | |
| Description | N-Channel IGBT | |
| Manufacturers | Intersil | |
| Logo |  |
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POSSTOIMBBLSEHOSGLUDTEBGaTStE3aT0PINSTR6hUO0eTBDeE3UtDPCRTODUCT
HGTG27N60C3DR
June 2000 File Number 4262.1
[ /Title
(HGT
G27N6
0C3D
R)
/Sub-
ject
(54A,
600V,
Rug-
ged
UFS
Series
N-
Chan-
nel
IGBT
with
Anti-
Paral-
lel
Ultrafa
st
Diode)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
semi-
con-
ductor,
Ava-
lanche
54A, 600V, Rugged UFS Series N-Channel
IGBT with Anti-Parallel Ultrafast Diode
This IGBT was designed for optimum performance in the
demanding world of motor control operation as well as other
high voltage switching applications. This device
demonstrates RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N60C3DR
TO-247
27N60C3DR
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . 200ns
• Short Circuit Rating at TJ = 150oC. . . . . . . . . . . . . . . 10µs
• Low Conduction Loss
Package
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G DataSheet4U.com
DDaattaaSShee
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
DataSheet4U.com
DataSheet4 U .com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
|
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HGTG27N60C3DR
Typical Performance Curves (Continued)
200
TJ = 150oC, RG = 3Ω, L = 1mH, VCE(PK) = 480V
100 TC = 75oC, VGE = 15V
30
20
10
120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 1mH
100
PARTS MAY CURRENT LIMIT IN THIS REGION
80
60
40
20
1
5
10
20 30
50 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
0
0 100 200 300 400 500 600 700
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 12. SWITCHING SAFE OPERATING AREA
et4U..ccoomm
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
FREQUENCY = 1MHz
CIES
15
12
9
COES
DataSheet4U.com6
3
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
0
0
VCE = 600V
VCE = 200V
VCE = 400V
30 60 90 120
QG, GATE CHARGE (nC)
150
FIGURE 13. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
DDaattaaSShee
DUTY CYCLE - DESCENDING ORDER
100 0.5
0.2
0.1
0.05
0.02
0.01
10-1
PD
t1
t2
NOTES:
10-2
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = (PD x ZθJC x RθJC) + TC
10-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
DataSheet4U.com
5
200
100
150oC
10
-40oC
1
0.5
0
25oC
0.5 1 1.5 2 2.5
VF, FORWARD VOLTAGE (V)
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
3
DataSheet4 U .com
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| Information | Total 7 Pages | |
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