K3306 Datasheet PDF - NEC
| Part Number | K3306 | |
| Description | MOSFET ( Transistor ) - 2SK3306 | |
| Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3306
Isolated TO-220 (MP-45F)
FEATURES
• Low gate charge :
5 QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
• Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±5
±20
35
2.0
150
–55 to +150
5.0
125
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14004EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
ID = 5.0 A
2.0 ID = 2.5 A
1.0
0.0
–50
10000
1 000
100
VGS = 10 V
0 50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
1
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
1000
2SK3306
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
1 VGS = 10 V
VGS = 0 V
0.1
0.01
0.0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
100
tr
td(off)
td(on)
10 tf
1
0.1
0.1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
2000
1800
1600
di/dt = 100 A/µs
VGS = 0 V
1400
1200
1000
800
600
400
200
0
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
ID = 5.0 A
700 14
600 VDD = 400 V
VGS
12
250 V
500 125 V
10
400 8
300 6
200
VDS
100
4
2
2 4 6 8 10 12 14
Qg - Gate Charge - nC
Data Sheet D14004EJ2V0DS00
5
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| Information | Total 8 Pages | |
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