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TIM1414-5L fiches techniques PDF

Toshiba - Microwave Power GaAs FET

Numéro de référence TIM1414-5L
Description Microwave Power GaAs FET
Fabricant Toshiba 
Logo Toshiba 





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TIM1414-5L fiche technique
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TOSHIBA
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1414-5L
FEATURES
„ HIGH POWER
P1dB=37.5dBm at 14.0GHz to 14.5GHz
„ HIGH GAIN
G1dB=6.0dB at 14.0GHz to 14.5GHz
„ BROAD BAND INTERNALLY MATCHED
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P1dB
CONDITION
G1dB VDS= 9V
f =14.0-14.5GHz
IDS1
ηadd
IM3
Two Tone Test
P=26dBm
IDS2 (Single Carrier Level)
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Tch VDS X IDS X Rth(c-c)
MIN.
37.0
5.0
-42
TYP. MAX. UNIT
37.5 dBm
6.0 dB
2.0 2.5 A
23
%
-45 dBc
2.0 2.5
80
A
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITION
gm VDS= 3V
IDS=2.4A
VGSoff VDS= 3V
IDS= 72mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -72µA
MIN. TYP. MAX. UNIT
1400 mS
-2.0 -3.5 -5.0 V
5.0 5.7 A
-5  
V
Rth(c-c) Channel to Case
3.0 3.7 °C/W
DataShee
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TOSHIBA CORPORATION
Jan. 2000
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