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Datasheet TIM1414-18L-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
TIM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TIM-LC | GPS Receiver Module www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
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your position is our focus
! Title Subtitle Doc Type Doc Id
Revision Index P1! P2! P3! P4! -!(Initial!Release)! A! B! C! D!
TIM-LC! GPS!Receiver!Module! Data!Sheet! GPS.G3-MS3-03019-D!
Date 2.!Apr.!03! 16.!Jun  uBlox receiver | | |
| 2 | TIM-LH | GPS Receiver Module
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TIM-LH
SuperSense GPS Receiver Module ® ANTARIS Positioning Engine
! ! ! The TIM-LH with SuperSense® provides unparalleled high sensitivity at ultra low power consumption. With –158 dBm tracking sensitivity, it is optimally suited for indoor GPS and other weak signal envi uBlox receiver | | |
| 3 | TIM-LR | Dead Reckoning GPS Receiver Module ANTARIS Positioning Engine !
TIM-LR
Dead Reckoning GPS Receiver Module ® ANTARIS Positioning Engine
! ! ! The! TIM-LR! is! an! ultra-low! power! sensor-based! dead! reckoning! GPS! module! suitable! for! passive! and! active! antennas.! ! The! combination! of! the! ANTARIS! GPS! positioning! engine! and! the! Enhanced! Kalm  ETC receiver | | |
| 4 | TIM1011-2L | MICROWAVE POWER GaAs FET
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIF  Toshiba Semiconductor data | | |
| 5 | TIM1011-4L | MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS Toshiba Semiconductor data | | |
| 6 | TIM1011-5L | MICROWAVE POWER GaAs FET
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-5L
HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIF Toshiba Semiconductor data | | |
| 7 | TIM1011-8L | MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz BROAD Toshiba Semiconductor data | |
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