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PDF NE663M04 Data sheet ( Hoja de datos )
| Número de pieza | NE663M04 | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | California Eastern Labs | |
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NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE663M04
FEATURES
• HIGH GAIN BANDWIDTH: fT = 15 GHz
• HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz
• LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz
• HIGH IP3: NF = 27 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
• LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.
DESCRIPTION
M04
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 19 GHz
the NE663M04 is usable in applications from 100 MHz to 5
GHz. The NE663M04 provides excellent low voltage/low
current performance.
NEC's low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE663M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
fT
|S21E|2
MSG
P1dB
IP3
NF
Cre
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCE = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain2 at VCE = 2 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 90 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 50 mA, f = 2 GHz
Maximum Stable Gain4 at VCE = 2 V, IC = 50 mA, f = 2 GHz
Output Power at 1 dB compression point at
VCE = 2 V, IC = 70 mA5, f = 2 GHz
Third Order Intercept Point at VCE = 2 V, IC = 70 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZIN = ZOPT
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
UNITS
µA
µA
GHz
dB
dB
dBm
dBm
dB
pF
NE663M04
2SC5509
M04
MIN TYP MAX
0.6
0.6
50 70 100
13 15
8 11
15
17
27
1.2 1.7
0.5 0.75
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S21
S12
5. Collector current at P1dB compression.
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California Eastern Laboratories
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TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 1 GHz
5.0
30
25
4.0 Ga 20
3.0 15
2.0 10
1.0
0.0
1
NF
10
Collector Current, lC (mA)
5
0
100
NE663M04
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 1.5 GHz
5.0
30
25
4.0 20
Ga
3.0 15
2.0 10
1.0 5
NF
0.0
1
0
10 100
Collector Current, lC (mA)
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NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 2 GHz
5.0
30
25
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
6.0
VCE = 2 V
f = 2.5 GHz
5.0
30
25
4.0 20 DataSheet4U.com 4.0 20
3.0 Ga 15
2.0 10
3.0 15
Ga
2.0 10
1.0 5
NF
0.0 0
1 10 100
Collector Current, lC (mA)
1.0 NF 5
0.0 0
1 10 100
Collector Current, lC (mA)
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NE663M04.PDF ] | |
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