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PDF KMM366S823DTS Data sheet ( Hoja de datos )
| Número de pieza | KMM366S823DTS | |
| Descripción | Unbuffered DIMM | |
| Fabricantes | Samsung Semiconductor | |
| Logotipo |  |
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KMM366S823DTS
Revision History
Revision 0.0 (May., 1999)
• PC133 first published.
PC133 Unbuffered DIMM
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KMM366S823DTS
PC133 Unbuffered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
et4U.com
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max Unit
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high votlage
VIH
2.0
3.0 VDDQ+0.3
V
Input logic low voltage
VIL -0.3
0
0.8
V
Output logic high voltage
VOH
2.4
-
-
V
Output logic low voltage
VOL -
- 0.4 V
Input leakage current
ILI Da-t1a0Sheet4U.co-m
10
uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
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CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Pin
Symbol
Min
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0)
Clock (CLK0, CLK2)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
CADD
CIN
CCKE
CCLK
CCS
CDQM
COUT
30
30
30
22
15
6
6
Max
45
45
45
30
25
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet KMM366S823DTS.PDF ] | |
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