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PDF IRF630MFP Data sheet ( Hoja de datos )
| Número de pieza | IRF630MFP | |
| Descripción | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRF630M
200 V < 0.40 Ω
9A
IRF630FPM
200 V < 0.40 Ω
9A
s TYPICAL RDS(on) = 0.35 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY™ process. This technology matches and
improves the performances compared with standard
parts from various sources.
INTERNAL SCHEMATIC DIAGRAM
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
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.APPLICATIONS
s MONITOR DISPLAYS
s GENERAL PURPOSE SWITCH
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2001
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Value
IRF630M
IRF630MFP
200
200
± 20
9 9 (**)
5.7 5.7 (**)
36 36
75 30
0.6 0.24
55
-- 2500
–65 to 150
150
(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9
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Gate Charge vs Gate-source Voltage
Capacitance Variations
IRF630M / FP
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
et4U.com
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Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF630MFP.PDF ] | |
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