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Silicon-Based Technology - Small Signal Schottky Barrier Diodes

Numéro de référence SBT10K45WS
Description Small Signal Schottky Barrier Diodes
Fabricant Silicon-Based Technology 
Logo Silicon-Based Technology 





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SBT10K45WS fiche technique
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Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT10K45WS Series
SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT®) developed by
Silicon-Based Technology Corporation, which exhibit high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high rewliabwilityw.DataSheet4U.com
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage
(Note 2)
Forward Voltage (Note 2)
Reverse Current (Note 2)
Total Capacitance
Symbol Min. Typ. Max. Unit Test Conditions
V(BR)R
VFM
IRM
CT
45 - - - IR=100µA
- 350 380 mV IF=10mA
- 0.07 0.5 µA VR=10V
- 6.0 - pF VR=10V, f=1.0MHZ
SBT Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
DataSheet4 U .com
Tel  886-3-5777897
Fax  886-3-5779832
www.DataSheet4U.com

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