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Silicon-Based Technology - Small Signal Schottky Barrier Diodes

Numéro de référence SBT103AD
Description Small Signal Schottky Barrier Diodes
Fabricant Silicon-Based Technology 
Logo Silicon-Based Technology 





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SBT103AD fiche technique
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Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT103D Series
SBT103D series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT®) developed by
Silicon-Based Technology Corporation, which exhibit high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high rewliabwilityw.DataSheet4U.com
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse
SBT103AD
Breakdown
SBT103BD
Voltage
SBT103CD
Maximum Forward Voltage Drop
Maximum Peak
Reverse Current
SBT103AD
SBT103BD
SBT103CD
Symbol
VFM
VFM
IRM
Min.
40
30
20
-
-
Typ.
-
-
-
Max.
-
0.35
0.50
5.0
Unit Test Conditions
V IRS=100µA
V
IF=20mA
IF=200mA
VR=30V
µA VR=20V
VR=10V
Total Capacitance
Cj - 50 - pF VR=0V, f=1.0MHZ
Reverse Recovery Time
trr
-
10
-
ns
IF=IR=50mA to 200mA,
Irr=0.1 IR,RL=100
SBT Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
DataSheet4 U .com
Tel  886-3-5777897
Fax  886-3-5779832
www.DataSheet4U.com

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