|
|
Numéro de référence | MADL01 | ||
Description | Power RF Amplifiers | ||
Fabricant | Polyfet RF Devices | ||
Logo | |||
1 Page
www.DataSheet4U.com
polyfet rf devices
MADL01
Power RF Amplifiers
Power = 10.0 Watts
Bandwidth = 20 to 110 Mhz
Gain = 25.0 dB Vdd =28.0 Volts
50 ohms Input/Output Impedance
Description
The MADL01 is a 10 Watt, 2 stage high gain
amplifier module covering a bandwidth of
20-110 Mhz. This compact module design is
suitable for military applications in a rugged
environment. A VAGC pin is provided to
control the output power of the module.
www.DataSheet4U.comAbsolute Maximum Ratings (T=25 oC)
Parameter
DC supply Voltage 1
DC supply Voltage 2
AGC Voltage
Input Power
Output Power
Operating Case Temp.
Storage Temperature
Symbol
VDD1
VDD2
VAGC
Pin
Pout
Tc
Tstg
Value
32.0
8.00
0.02
15.0
-20 to +85
-30 to +100
Unit
V
V
V
W
W
oC
oC
Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms. Vdd= 28.0 Volts )
Parameter
Frequency Range
Outut Power
Power Gain
Total Efficiency
2nd Harmonics
Intermod - 2 tone
Load Mismatch Tolerance
Symbol
BW
Po
PG
h
dso
Ip3
VSWR
Min
20
10.0
25.0
40
10:1
Typical
-45.00
Max
110
Unit
Mhz
Watts
dB
%
dBc
dBm
Relative
Test Conditions
50 ohm load
Idq = 1.20 Amps
@ Pout = 10.0 Watts
@ Pout = 10.0 Watts
@ Pout = 10.0 W. Freq = 65 Mhz
Freq = 65 Mhz; AvePwr= W
All Phase Angles
POLYFET RF DEVICES
REVISION 01/17/2006
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com
DataSheet4 U .com
www.DataSheet4U.com
|
|||
Pages | Pages 2 | ||
Télécharger | [ MADL01 ] |
No | Description détaillée | Fabricant |
MADL01 | Power RF Amplifiers | Polyfet RF Devices |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |