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IRFP31N50L fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFP31N50L
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFP31N50L fiche technique
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SMPS MOSFET
PD - 94081
IRFP31N50L
Applications
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
VDSS
500V
RDS(on) typ.
0.15
ID
31A
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
31
ID @ TC = 100°C
IDM
www.DataSheet4U.comPD@TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
20
124
460
Linear Derating Factor
3.7
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
± 30
19
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
300
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 31
MOSFET symbol
D
––– ––– 124
A showing the
integral reverse
G
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 31A, VGS = 0V „
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 31A
di/dt = 100A/µs „
––– 570 860 nC TJ = 25°C
––– 1.2 1.8 µC TJ = 125°C
––– 7.9 12 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
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1
05/23/01
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