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Numéro de référence | IRFP350A | ||
Description | Advanced Power MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
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IRFP350A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
BVDSS = 400 V
RDS(on) = 0.3Ω
ID = 17 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Symbol
Characteristic
Value
VDSS
Drain-to-Source Voltage
400
ID
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
17
10.8
IDM Drain Current-Pulsed
(1) 68
VGS Gate-to-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(2)
1156
IAR Avalanche Current
(1) 17
EAR
www.DataSheet4U.comdv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(1)
(3)
20.2
4.0
PD
Total Power Dissipation (TC=25°C)
Linear Derating Factor
202
1.61
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
Maximum Lead Temp. for Soldering
TL Purposes, 1/8 from case for 5-seconds
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.62
--
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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Pages | Pages 7 | ||
Télécharger | [ IRFP350A ] |
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