|
|
Número de pieza | IRFP360LC | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFP360LC (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! www.DataSheet4U.com
Previous Datasheet
Index
Next Data Sheet
HEXFET® Power MOSFET
PD - 9.1230
IRFP360LC
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
VDSS = 400V
RDS(on) = 0.20Ω
ID = 23A
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
www.DataSheet4U.combut superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
23
14
92
280
2.2
±30
1200
23
28
4.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
DataSheet 4 U .com
To Order
Revision 0
www.DataSheet4U.com
1 page www.DataSheet4U.com
Previous Datasheet
Index
Next Data Sheet
IRFP360LC
VDS
RD
25 VGS D.U.T.
RG
VDD
20
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
wCawse Tewmpe.raDtureataSheet4U.com
1
D = 0.50
0.1
0.01
0 .2 0
0 .1 0
0.05
0 .0 2
0 .0 1
SING LE PULSE
(THERM AL RESPO NSE)
0.001
0.00001
0.0001
PD M
N o tes:
1. D uty fa ctor D = t 1 / t 2
t1
t2
2. P e ak TJ = P D M x Z th JC + T C
0 .001
0.01
0.1
1
t1 , R ectang ular Pulse D ura tion (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
DataSheet 4 U .com
To Order
www.DataSheet4U.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP360LC.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP360LC | Power MOSFET ( Transistor ) | International Rectifier |
IRFP360LC | Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC | New Jersey Semiconductor |
IRFP360LCPBF | HEXFET Power MOSFET | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |