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PDF EN29LV400B Data sheet ( Hoja de datos )
| Número de pieza | EN29LV400B | |
| Descripción | 4M Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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EN29LV400
E4dNMa20e9g.LaVbi4t0(0512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• 3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
commands
• High performance
- Access times as fast as 45 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• JEDEC standard DATA polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• Flexible Sector Architecture:
• triple-metal double-poly triple-well CMOS
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
www.DataSheet4U.comand seven 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
Flash Technology
• Low Vcc write inhibit < 2.5V
and seven 32 Kword sectors (word mode)
• >100K program/erase endurance cycle
- Supports full chip erase
- Individual sector erase supported
• Package Options
- Sector protection:
- 48-pin TSOP (Type 1)
Hardware locking of sectors to prevent
program or erase operations within individual
- 48-ball 6mm x 8mm FBGA
sectors
• Commercial and Industrial Temperature
Additionally, temporary Sector Group
Range
Unprotect allows code changes in previously
locked sectors.
GENERAL DESCRIPTION
The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The
EN29LV400 features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2004/03/18
www.DataSheet4U.com
1 page  
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EN29LV400
TABLE 2B. BOTTOM BOOT BLOCK SECTOR ARCHITECTURE
Sector
ADDRESS RANGE
(X16)
(X8)
SECTOR
SIZE
(Kbytes/ A17 A16 A15 A14 A13 A12
Kwords)
10 38000h-3FFFFh 70000h –7FFFFh 64/32 1 1 1 X X X
9
30000h-37FFFh 60000h – 6FFFFh
64/32
1 1 0XXX
8
28000h-2FFFFh 50000h – 5FFFFh
64/32
1 0 1XXX
7
20000h-27FFFh 40000h – 4FFFFh
64/32
1 0 0XXX
6
18000h-1FFFFh 30000h – 3FFFFh
64/32
0 1 1XXX
5
10000h-17FFFh 20000h – 2FFFFh
64/32
0 1 0XXX
4
08000h-0FFFFh 10000h – 1FFFFh
64/32
0 0 1XXX
3
04000h-07FFFh 08000h – 0FFFFh
32/16
00 01XX
2 03000h-03FFFh 06000h – 07FFFh 8/4 0 0 0 0 1 1
www.DataSheet4U.com1 02000h-02FFFh 04000h – 05FFFh 8/4 0 0 0 0 1 0
0
00000h-01FFFh 00000h – 03FFFh
16/8
00000X
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2004/03/18
www.DataSheet4U.com
5 Page 
www.DataSheet4U.com
EN29LV400
COMMAND DEFINITIONS
The operations of the EN29LV400 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV400 Command Definitions
Bus Cycles
Command
Sequence
Read
Reset
1st 2nd 3rd 4th 5th
Cycle
Cycle
Cycle
Cycle
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data
1 RA RD
1 xxx F0
Manufacturer
ID
Word
Byte
4
555
AA
AAA
2AA
55
555
555
AAA
90
100 1C
200 1C
Device ID
Top Boot
Word
Byte
4
555
AAA
AA
2AA
555
55
555
AAA
90
X01 22B9
X02 B9
Device ID
Bottom Boot
Word 4 555 AA 2AA 55
Byte
AAA
555
555 90
AAA
X01 22BA
X02 BA
Sector Protect Word
www.DataSheet4U.comVerify
Byte
4
555
AA
AAA
2AA
55
555
555
AAA
90
(SA)
X02
(SA)
X04
XX00
XX01
00
01
Program
Word 4 555 AA 2AA 55
Byte
AAA
555
555 A0
AAA
PA PD
Unlock Bypass
Word 3 555 AA 2AA 55
Byte
AAA
555
555 20
AAA
Unlock Bypass Program 2 XXX A0 PA PD
Unlock Bypass Reset
2 XXX 90 XXX 00
Chip Erase
Word
Byte
6
555
AAA
AA
2AA
555
55
555
AAA
80
555
AAA
AA
2AA
555
55
Sector Erase
Word
Byte
6
555
AAA
AA
2AA
555
55
555
AAA
80
555
AAA
AA
2AA
555
55
Erase Suspend
1 xxx B0
Erase Resume
1 xxx 30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A17-A12 uniquely select any Sector.
6th
Cycle
Addr Data
555
AAA
SA
10
30
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions 11 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2004/03/18
www.DataSheet4U.com
11 Page | ||
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