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Toshiba Semiconductor - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Numéro de référence GT8G132
Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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GT8G132 fiche technique
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
GT8G132
Strobe Flash Applications
Unit: mm
Supplied in compact and thin package requires only a small
mounting area
5th generation (trench gate structure) IGBT
Enhancement-mode
4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC IC
8
A
1 ms
ICP
150
Collector power dissipation
www.DataSheet4U.comJunction temperature
(Note 1)
PC
Tj
1.1 W
150 °C
JEDEC
JEITA
Storage temperature range
Tstg
55~150
°C
TOSHIBA
2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17
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