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Numéro de référence | GT8G132 | ||
Description | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
GT8G132
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC IC
8
A
1 ms
ICP
150
Collector power dissipation
www.DataSheet4U.comJunction temperature
(Note 1)
PC
Tj
1.1 W
150 °C
JEDEC
JEITA
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
―
―
2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 × 1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1234
1 2002-05-17
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Pages | Pages 6 | ||
Télécharger | [ GT8G132 ] |
No | Description détaillée | Fabricant |
GT8G131 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
GT8G132 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor |
GT8G133 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
GT8G134 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
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