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Número de pieza | IRFP260 | |
Descripción | Standard Power MOSFET - N-Channel Enhancement Mode | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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Standard
Power MOSFET
N-Channel Enhancement Mode
IRFP 260
VDSS = 200 V
ID (cont) =
46 A
RDS(on) = 55 mΩ
Symbol Test Conditions
VDSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
E
AR
dv/dt
PD
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
46 A
184 A
46 A
28 mJ
5 V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
280 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 200V
VDS = 160V
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 28 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200
2
V
4V
±100 nA
25 µA
250 µA
0.055 Ω
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97545(1/98)
1-2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IRFP260.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP260 | Standard Power MOSFET - N-Channel Enhancement Mode | IXYS Corporation |
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