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Shanghai - Silicon NPN Epitaxial Transistor

Numéro de référence C1815
Description Silicon NPN Epitaxial Transistor
Fabricant Shanghai 
Logo Shanghai 





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C1815 fiche technique
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C1815
C1815 Silicon NPN Epitaxial Transistor
Description : The C1815 is designed for audio frequency general purpose amplifier
applications and driver stage amplifier applications
Features: Excellent hFE Linearity
Complementary to A1015
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
350um×350um
210±20um
110um×110um
100um×100um
Al
Au(As)
40um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
ICBO VCB=60V, IE=0
IEBO VEB=5V, IC=0
Collector-Base Breakdown Voltage
BVCBO IC=0.1mA,
Collector-Emitter Breakdown Voltage BVCEO IC=1mA,
Emitter-Base Breakdown Voltage
BVEBO IE=0.1mA,
Min Max
0.1
0.1
60
50
5.0
DC Current Gain
hFE VCE=6V, IC=2mA
150 600
Collector Saturation Voltage
VCE(sat) IC=100mA,IB=10mA
0.30
Unit
uA
uA
V
V
V
V
www.DataSheet4U.com
May.2004
Version :0.0
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