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PDF TC1428 Data sheet ( Hoja de datos )
| Número de pieza | TC1428 | |
| Descripción | (TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS | |
| Fabricantes | TelCom Semiconductor | |
| Logotipo |  |
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1TC1426
TC1427
TC1428
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
FEATURES
s Low Cost
s Latch-Up Protected: Will Withstand 500 mA Reverse
Output Current
s ESD Protected ................................................... ±2 kV
s High Peak Output Current ........................ 1.2A Peak
s High Capacitive Load Drive
Capability ...................................... 1000pF in 38nsec
s Wide Operating Range ........................... 4.5V to 16V
s Low Delay Time ...................................... 75nsec Max
s Logic Input Threshold Independent of
Supply Voltage
s Output Voltage Swing to Within 25mV of
Ground or VDD
s Low Output Impedance ........................................ 8Ω
APPLICATIONS
s Power MOSFET Drivers
s Switched Mode Power Supplies
s Pulse Transformer Drive
s Small Motor Controls
s Print Head Drive
PIN CONFIGURATIONS
NC 1
8 NC
NC 1
8 NC
NC 1
8 NC
IN A 2
7 OUT A IN A 2
7 OUT A IN A 2
7 OUT A
TC1426CPA
GND 3
6 VDD
TC1427CPA
GND 3
6 VDD
TC1428CPA
GND 3
6 VDD
IN B 4
5 OUT B IN B 4
5 OUT B IN B 4
5 OUT B
2, 4 7, 5
2, 4 7, 5
27
INVERTING
NC = NO CONNECTION
NON-INVERTING
45
NC 1
IN A 2
GND 3
IN B 4
8 NC
NC 1
TC1426COA 7 OUT A IN A 2
6 VDD GND 3
5 OUT B IN B 4
8 NC
NC 1
7 OUT A IN A 2
TC1427COA
6 VDD GND 3
5 OUT B IN B 4
8 NC
7 OUT A
TC1428COA
6 VDD
5 OUT B
2, 4 7, 5
2, 4 7, 5
27
INVERTING
NC = NO CONNECTION
NON-INVERTING
45
FUNCTIONAL BLOCK DIAGRAM
V+
Ϸ 2.5mA
Ϸ500µA
TC1426 INVERTING
TC1427 NONINVERTING
TC1428 INVERTING/NONINVERTING
NONINVERTING INVERTING
www.DataSheet4U.com OUTPUT
OUTPUT
(TC1427)
(TC1426)
INPUT
GND
NOTE: TC1428 has one inverting and one noninverting driver.
Ground any unused driver input.
TELCOM SEMICONDUCTOR, INC.
GENERAL DESCRIPTION
The TC1426/27/28 are a family of 1.2A dual high- speed
drivers. CMOS fabrication is used for low power consump-
tion and high efficiency.
These devices are fabricated using an epitaxial layer to
effectively short out the intrinsic parasitic transistor respon-
sible for CMOS latch-up. They incorporate a number of other
design and process refinements to increase their long-term
reliability.
The TC1426 is compatible with the bipolar DS0026, but
only draws 1/5 of the quiescent current. The TC1426/27/28
are also compatible with the TC426/27/28, but with 1.2A
peak output current rather than the 1.5A of the TC426/27/28
devices.
Other compatible drivers are the TC4426/27/28 and the
TC4426A/27A/28A. The TC4426/27/28 have the added
feature that the inputs can withstand negative voltage up to
5V with diode protection circuits. The TC4426A/27A/28A
have matched input to output leading edge and falling edge
delays, tD1 and tD2, for processing short duration pulses in
the 25 nanoseconds range. All of the above drivers are pin
compatible.
The high-input impedance TC1426/27/28 drivers are
CMOS/TTL input-compatible, do not require the speed-up
needed by the bipolar devices, and can be directly driven by
most PWM ICs.
This family of devices is available in inverting and non-
inverting versions. Specifications have been optimized to
achieve low-cost and high-performance devices, well-suited
for the high-volume manufacturer.
ORDERING INFORMATION
Part No.
Package
TC1426COA
TC1426CPA
8-Pin SOIC
8-Pin Plastic DIP
TC1427COA
TC1427CPA
8-Pin SOIC
8-Pin Plastic DIP
TC1428COA
TC1428CPA
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
TC1426/7/8-8 10/11/96
4-207
2
3
4
5
6
7
8
1 page  
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1.2A DUAL HIGH-SPEED MOSFET DRIVERS
1
TC1426
TC1427
TC1428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
550
TA = +25°C
440
Fall Time vs. Supply Voltage
330
TA = +25°C
264
Delay Time vs. Supply Voltage
80
CL = 1000pF
TA = +25°C
70
2
330 10,000pF
220
4700pF
110
2200pF
0
5 7 9 11 13 15
VDD (V)
Rise and Fall Times vs. Temperature
40
CL = 1000pF
VDD = +15V
32
tRISE
24 tFALL
16
8
198
10,000pF
60
132
4700pF
50
tD1
66
2200pF
40
tD2
05 7
9
11
13
15
30
5
7
9 11
13 15
VDD (V)
VDD (V)
Delay Time vs. Temperature
60
CL = 1000pF
VDD = +15V
54
tD2
48
42 tD1
36
Supply Current vs. Capacitive Load
30
CL = 1000pF
VDD = 15V
24 TA = +25°C
500kHz
18
200kHz
12
20kHz
6
3
4
5
0
25 45 65
85 105 125
TEMPERATURE (°C)
0
25 45 65 85 105 125
TEMPERATURE (°C)
0
100
520 940 1360 1780 2200
CAPACITIVE LOAD (pF)
6
Rise Time vs. Capacitive Load
1000
TA = +25°C
5 VDD
100
10 VDD
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15 VDD
10
100
1000
10,000
CAPACITIVE LOAD (pF)
Fall Time vs. Capacitive Load
1000
TA = +25°C
5VDD
100
10VDD
15VDD
10
100
1000
10,000
CAPACITIVE LOAD (pF)
Supply Current vs. Frequency
100
CL = 1000pF
80 TA = +25°C
VDD = 15V
VDD = 10V
60
40
20
VDD = 5V
0
10
100
1000
10,000
FREQUENCY (kHz)
7
8
TELCOM SEMICONDUCTOR, INC.
4-211
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TC1428.PDF ] | |
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