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HN29V25611ABP fiches techniques PDF

Hitachi - 256M AND Type Flash Memory

Numéro de référence HN29V25611ABP
Description 256M AND Type Flash Memory
Fabricant Hitachi 
Logo Hitachi 





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HN29V25611ABP fiche technique
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HN29V25611ABP Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1281 (Z)
Preliminary
Rev. 0.0
Aug. 10, 2001
Description
The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611A are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
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Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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