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PDF FLL300IL-3 Data sheet ( Hoja de datos )

Número de pieza FLL300IL-3
Descripción (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
Fabricantes Fujitsu Microelectronics 
Logotipo Fujitsu Microelectronics Logotipo



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FLL300IL-1, FLL300IL-2, FLL300IL-3www.DataSheet4U.com
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 44.5dBm (Typ.)
• High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
• High PAE: ηadd = 44% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
100 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with
gate resistance of 25.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions*
Min.
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
-
Transconductance
gm VDS = 5V, IDS = 7200mA
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 720mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -720µA
-5
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
FLL300IL-1
FLL300IL-2
FLL300IL-3
FLL300IL-1
FLL300IL-2
FLL300IL-3
f=900MHz
P1dB
G1dB
VDS = 10V
IDS = 0.5 IDSS
(Typ.)
f=1.8GHz
f=2.6GHz
f=900MHz
f=1.8GHz
f=2.6GHz
43.0
11.0
10.0
8.0
Drain Current
Power added Efficiency
Idsr VDS = 10V
ηadd IDS = 0.5 IDSS (Typ.)
-
-
Thermal Resistance
wChwawnn.DelaTteamSpheeraetut4reUR.cisoem
Rth Channel to Case
-
Tch (10V x Idsr - Pout + Pin) x Rth -
CASE STYLE: IL
* Under fixed VGS bias condition
Limit
Typ. Max.
12 16
6000 -
-2.0 -3.5
--
Unit
A
mS
V
V
44.5 -
dBm
13.0 -
12.0 -
dB
dB
10.0 -
6.0 8.0
dB
A
44 -
1.1 1.5
- 80
%
°C/W
°C
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1

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FLL300IL-3 pdf
FLL300IL-3www.DataSheet4U.com
L-Band Medium & High Power GaAs FET
+j25 1.5GHz
2.5
+j10
1.5GHz
2.5
0 10 25
3.5
-j10 3.5
+j50
+j100
2.0
3.0
50100
250
3.0
+j250
-j250
S11
S22
180°
+90°
.04
2.5
.03
.02
3.0
2.5
4 32
SCALE FOR |S21|
1
3.5
2.0
.01
1.5
3.5
1.5
2.0
S21
S12
3.0 0°
-j25
-j50
FREQUENCY
S11
(MHZ)
MAG ANG
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
.902 130.6
.872 123.3
.829 114.2
.756 102.9
.645 88.8
.463 71.7
.217 54.5
.065 173.9
.285 175.2
.441 157.4
.523 137.6
.560 119.7
.583 99.3
.578 72.8
.564 37.9
.564 -4.7
.605 -44.2
.731 -80.2
.813 -109.5
.864 -131.0
.895 -147.1
-j100
S-PARAMETERS
-90°
VDS = 10V, IDS = 6000mA
S21 S12
MAG ANG
MAG ANG
1.169 -3.1 .009
-55.7
1.324
-13.4
.010
-69.8
1.539
-25.8
.012
-81.5
1.824
-40.5
.016
-96.1
2.199
-57.7
.019
-113.4
2.604
-78.8
.024
-134.7
2.939
-103.5
.028
-160.3
3.080
-129.4
.031
173.7
3.055
-153.9
.032
150.2
2.938
-176.2
.032
128.8
2.843
166.5
.032
110.8
2.768
146.9
.033
91.6
2.791
126.7
.035
72.2
2.840
104.2
.036
49.8
2.854
79.1
.039
28.0
2.789
51.3
.039
0.5
2.536
20.3
.039
-33.2
1.981 -9.0 .031
-63.6
1.502
-32.7
.023
-88.0
1.130
-52.7
.019
-106.9
.853 -69.8 .013 -121.2
S22
MAG
ANG
.854 155.0
.852 153.2
.847 150.7
.847 148.5
.854 146.1
.860 142.2
.867 137.4
.848 131.6
.808 125.3
.752 119.7
.700 119.6
.628 113.6
.550 109.0
.461 102.5
.348 94.4
.208 91.8
.081 125.9
.132 -167.4
.253 -158.6
.345 -162.2
.408 -168.1
www.DataSheet4U.com
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.5 IDSS
46 f = 2.6 GHz
44
Pout
42 60
40 45
38 30
36 ηadd 15
26 28 30 32 34 36
0
Input Power (dBm)
Download S-Parameters, click here
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