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Numéro de référence | KSA542 | ||
Description | Low Frequency Amplifier | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
( DataSheet : www.DataSheet4U.com )
KSA542
LOW FREQUENCY AMPLIFIER
• Collector-Base Voltage : VCBO= -30V
• Low Collector-Emitter Saturation Voltage : VCE(sat)= -0.15V(TYP.)
• Complement to KSC184
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ratings
-30
-25
-5
-50
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -100µA, IE=0
IC= -10mA. IB=0
IE = -10µA. IC=0
VCB= -25V, IE=0
VEB= -3V, IC=0
VCE= -6V, IC= -1mA
IC= -20mA, IB= -2mA
VCE= -6V, IC= -1mA
VCE= -6V, IC= -1mA
VCB= -6V, IE = 0, f=1MHz
Min.
-30
-25
-5
40
Typ.
-0.15
-0.65
100
2.5
Max.
-100
-100
400
-0.3
-1.0
Units
V
V
V
nA
nA
V
V
MHz
pF
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2000 Fairchild Semiconductor International
www.DataSheet4U.com
Rev. A, February 2000
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Pages | Pages 4 | ||
Télécharger | [ KSA542 ] |
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