PDF UAA3559HN Data sheet ( Hoja de datos )

Número de pieza	UAA3559HN
Descripción	Bluetooth RF Transceiver
Fabricantes	NXP Semiconductors
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No Preview Available ! ( DataSheet : www.DataSheet4U.com ) INTEGRATED CIRCUITS DATA SHEET UAA3559HN Bluetooth RF transceiver Objective speciﬁcation 2003 Jul 04 www.DataSheet4U.com www.DataSheet4U.com 1 page Philips Semiconductors Bluetooth RF transceiver Objective speciﬁcation UAA3559HN handbook, full pagewidth S_EN 8 STCTR 7 S_DATA 6 VSS 5 R_DATA 4 VDD 3 REFCLK 2 RSSI 1 bottom view UAA3559HN 17 R_ON 18 T_ON 19 TXGND 20 TXA 21 TXB 22 VCC(TX) 23 PLLGND 24 VCC(PLL) MDB180 Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION Transmit chain VCO; BUFFER AND DIVIDER The VCO has a fully integrated tank circuit with on-chip inductors, and an on-chip regulator which minimizes any frequency disturbances caused by VCC variations. The VCO regulator requires a decoupling capacitor to be connected to pin VREG. The VCO operates at twice the Bluetooth frequency. The VCO signal is buffered and fed into a divide-by-two circuit to produce the required Local Oscillator (LO) frequencies for either transmit (TX) mode or receive (RX) mode. The large difference between the transmitter and VCO frequencies reduces transmitter to oscillator coupling problems. The output of the divide-by-two circuit drives the main divider prescaler in the synthesizer and also drives the TX preamplifier in TX mode, or the RX LO buffer in RX mode. The high isolation between the VCO buffer and the main divider ensures that only very small frequency changes occur when the TX preamplifier or the RX section are turned on. In the TX mode, the VCO is directly modulated with GFSK data at pin VMOD. TRANSMIT PREAMPLIFIER The TX preamplifier gain is programmable in seven steps of up to 4 dB and can either amplify the RF signal up to a level of 9 dBm (typical), or attenuate the RF signal to −7.5 dBm (typical), see Table 5. The output of the TX preamplifier at pins TXA and TXB can directly drive an antenna via a PIN diode switch and band filter for Bluetooth power class 2 and 3 applications. The type of TX preamplifier load can affect the frequency of the VCO when the preamplifier powers up. This ‘pulling’ effect can be counteracted by changing the time at which the preamplifier powers up, and is implemented by selecting one of two possible ramp-up modes: ramp-up mode 0 or ramp-up mode 1. In ramp-up mode 0, the preamplifier powers up on the rising edge of STCTR. In ramp-up mode 1, the preamplifier powers up on the falling edge of STCTR; see Table 3 and timing diagrams Figs 3 and 4. 2003 Jul 04 5 5 Page Philips Semiconductors Bluetooth RF transceiver Objective speciﬁcation UAA3559HN SYMBOL PARAMETER CONDITIONS ∆fVCO(VTUNE) ∆f(slope)(l) ∆f(slope)(h) ∆fVCO(mod) frequency variation with voltage on pin VTUNE tuning slope low band tuning slope high band frequency variation with modulation input deﬁned at LO frequency; 0.3 < VCP < (VCC − 0.3) note 3 note 3 deﬁned at LO frequency; VVMOD(DC) = 0.9 V TX preampliﬁer Po output power Tamb = −30 to +85 °C; note 2 bits [12:10] = 000 bits [12:10] = 001 bits [12:10] = 010 bits [12:10] = 011 bits [12:10] = 100 bits [12:10] = 101 bits [12:10] = 110 bits [12:10] = 111 Ro resistive part of parallel output balanced; at 2450 MHz impedance Co capacitive part of parallel balanced; at 2450 MHz output impedance VCO(feedthru) VCO frequency feedthrough level at TX output referenced to Po at 2450 MHz; note 2 C/N carrier-to-noise ratio at carrier offset is 500 kHz TX output carrier offset is 2500 kHz Receiver section; notes 5 and 6 fi(RF) Vo(RSSI) RF input frequency RSSI output voltage monotonic over range −86 to −36 dBm with −36 dBm at RF input with −86 dBm at RF input twake ∆Pi(sens) Pi(max) αim wake-up time between receiver power-up and correct RSSI output input sensitivity maximum useable input level intermodulation rejection no external capacitor on pin RSSI BER ≤ 10−3; with TX carrier frequency offset up to ±115 kHz for Tamb = −30 to +85 °C; note 2 BER ≤ 10−3; note 2 BER ≤ 10−3; desired channel = −67 dBm; interfering frequency at 5 and 10 channels away from desired channel; note 2 MIN. − − − 0.8 − − − − 1.5 − − − − − − − − 2 402 − tbf − − −23 − TYP. 120 110 110 1.0 −7.5 −4.5 −0.5 1.5 4.5 8 9 9 tbf tbf −20 −107 −126 − 1.6 0.3 8 −85 − 34 MAX. − − − 1.2 − − − − 7.5 − − − − − − −89 − 2 480 1.8 0.5 25 −73 − − UNIT MHz/V MHz/V MHz/V MHz/V dBm dBm dBm dBm dBm dBm dBm dBm Ω pF dBc dBc/Hz dBc/Hz MHz V V µs dBm dBm dBc 2003 Jul 04 11 11 Page

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