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KM644002B fiches techniques PDF

Samsung Semiconductor - 1M X 4 Bit (with Oe)high Speed CMOS Static RAM

Numéro de référence KM644002B
Description 1M X 4 Bit (with Oe)high Speed CMOS Static RAM
Fabricant Samsung Semiconductor 
Logo Samsung Semiconductor 





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KM644002B fiche technique
( DataSheet : www.DataSheet4U.com )
KM644002B, KM644002BI
PRELIMINARY
CMOS SRAM
Document Title
1Mx4 Bit (with OE) High Speed Static RAM(5V Operating),
Operated at Commercial and Industrial Temperature Range.
Revision History
RevNo.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.2.1
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet
1. Delete Preliminary
2. Add 30pF capacitive in test load
3. Relex DC characteristics
Item
ICC 10ns
12ns
15ns
ISB f=max.
Previous
190mA
180mA
170mA
40mA
Current
195mA
190mA
185mA
50mA
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
ICC
195/190/185mA
220/215/210mA
Draft Data
Jan. 1st 1997
Jun. 1st 1997
Remark
Design Target
Preliminary
Feb. 11th 1998 Final
Jun. 27th 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
June 1998
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