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PDF FCI11N60 Data sheet ( Hoja de datos )
| Número de pieza | FCI11N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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( DataSheet : www.DataSheet4U.com )
FCI11N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff. = 95pF)
• 100% Avalanche Tested
July 2005
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
D
{
z
G{
z
z
{
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCI11N60
600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300
FCI11N60
1.0
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
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©2005 Fairchild Semiconductor Corporation
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1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
12V
10V
50KΩ
200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FCI11N60 Rev. A1
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCI11N60.PDF ] | |
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