(PDF) HC114E Datasheet - NPN Digital Transistor

Número de pieza	HC114E
Descripción	NPN Digital Transistor
Fabricantes	Shantou Huashan Electronic Devices
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No Preview Available ! Shantou Huashan Electronic Devices Co.,Ltd. NPN DIGITAL TRANSISTOR HC114E APPLICATIONS Switching Circuit Interface Circuit ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92S Tstg Storage Temperature -55~150 Tj Junction Temperature 150 PC Collector Dissipation VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 300mW 50V 50V 1 Emitter E 2 Collector C 3 Base B VEBO Emitter - Base Voltage 10V IC Collector Current -1 00 m A ELECTRICAL CHARACTERISTICS Ta=25 Symbol BVCBO BVCEO ICBO ICEO IEBO HFE VCE(sat) R1 R2/R1 fT Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions IC=10 A, IE=0 IC=0.1mA, IB=0 VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA VCE=-10V, IC=-5mA www.DataSheet4U.com www.DataSheet4U.com 1 page

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PDF HC114E Data sheet ( Hoja de datos )